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| Datasheet File OCR Text: |
| PROCESS Zener Diodes CPZ25 1.5 W Zener Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 33.5 X 33.5 MILS 8.0 MILS 23 X 23 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 10,070 PRINCIPAL DEVICE TYPES 1N5913B THRU 1N5956B ANODE BACKSIDE CATHODE R0 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20-June 2002) |
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